Thermally stable and low-resistance W/Ti/Au contacts to n-type GaNRAJAGOPAL REDDY, V; KIM, Sang-Ho; HONG, Hyun-Gi et al.Journal of materials science. Materials in electronics. 2009, Vol 20, Num 1, pp 9-13, issn 0957-4522, 5 p.Article

Electrical and thermal stability of Ag ohmic contacts for GaN-based flip-chip light-emitting diodes by using an AgAl alloy capping layerYOON TAE HWANG; HONG, Hyun-Gi; SEONG, Tae-Yeon et al.Materials science in semiconductor processing. 2007, Vol 10, Num 1, pp 14-18, issn 1369-8001, 5 p.Article

Improvement of the electrical performance of near UV GaN-based light-emitting diodes using Ni nanodotsSONG, June-O; HUN KANG; FERGUSON, I. T et al.Solid-state electronics. 2005, Vol 49, Num 12, pp 1986-1989, issn 0038-1101, 4 p.Article

Investigation of Reverse Leakage Characteristics of InGaN/GaN Light-Emitting Diodes on SiliconKIM, Jaekyun; KIM, Jun-Youn; TAK, Youngjo et al.IEEE electron device letters. 2012, Vol 33, Num 12, pp 1741-1743, issn 0741-3106, 3 p.Article

Growth of high-quality InGaN/GaN LED structures on (1 1 1) Si substrates with internal quantum efficiency exceeding 50%LEE, Jaewon; TAK, Youngjo; KIM, Jun-Youn et al.Journal of crystal growth. 2011, Vol 315, Num 1, pp 263-266, issn 0022-0248, 4 p.Conference Paper

Highly efficient InGaN/GaN blue LEDs on large diameter Si (111) substrates comparable to those on sapphireKIM, Jun-Youn; TAK, Yongjo; KIM, Minho et al.Proceedings of SPIE, the International Society for Optical Engineering. 2011, Vol 8123, issn 0277-786X, isbn 978-0-8194-8733-9, 81230A.1-81230A.6Conference Paper

Formation of low-resistance and transparent indium tin oxide ohmic contact for high-brightness GaN-based light-emitting diodes using a Sn-Ag interlayerSONG, June-O; KIM, Kyung-Kook; KIM, Hyunsoo et al.Materials science in semiconductor processing. 2007, Vol 10, Num 4-5, pp 211-214, issn 1369-8001, 4 p.Article

Use of an indium zinc oxide interlayer for forming ag-based ohmic contacts to p-type GaN for UV-light-emitting diodesBAN, Keun-Yong; HONG, Hyun-Gi; DO YOUNG NOH et al.Semiconductor science and technology. 2005, Vol 20, Num 9, pp 921-924, issn 0268-1242, 4 p.Article